SPC65R360G MOSFET Datasheet: N-Ch, 650V, 11.5A. Full specification with pinout and replacement list

SPC65R360G Specs and Replacement

Type Designator: SPC65R360G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220F

SPC65R360G substitution

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SPC65R360G datasheet

..1. Size:718K cn sinai power
spc65r360g spe65r360g spd65r360g.pdf pdf_icon

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8.1. Size:768K cn sinai power
spc65r90g.pdf pdf_icon

SPC65R90G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m ) V =10V 90 DS(on) GS ID=30A(Vgs=10V) Q max. (nC) 85 g Ultra Low Gate Charge Q (nC) 15 gs Improved dv/dt Capability Q (nC) 25 gd RoHS compliant Configu... See More ⇒

8.2. Size:826K cn sinai power
spc65r180g spb65r180g.pdf pdf_icon

SPC65R180G,SPB65R180G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m ) V =10V 180 DS(on) GS ID=20A(Vgs=10V) Q max. (nC) 75 g Ultra Low Gate Charge Q (nC) 17 gs Improved dv/dt Capability Q (nC) 26 gd RoHS Compli... See More ⇒

Detailed specifications: SPC10N65G, SPC10N80G, SPC16N65G, SPC18N50G, SPC20N65G, SPC4N65G, SPC65R180G, SPB65R180G, AON6380, SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G, SPD7N65G