SPD65R360G Specs and Replacement
Type Designator: SPD65R360G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
SPD65R360G substitution
- MOSFET ⓘ Cross-Reference Search
SPD65R360G datasheet
Detailed specifications: SPC16N65G, SPC18N50G, SPC20N65G, SPC4N65G, SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G, CS150N03A8, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G, SPD7N65G, SPE4N65G, SPE7N65G
Keywords - SPD65R360G MOSFET specs
SPD65R360G cross reference
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SPD65R360G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NVD5862N | TPCS8004 | WTD9973 | AP2346GN-HF | WSF45P06
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