SPD65R360G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPD65R360G
Marking Code: 65R360G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
SPD65R360G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPD65R360G Datasheet (PDF)
..1. Size:718K cn sinai power
spc65r360g spe65r360g spd65r360g.pdf
spc65r360g spe65r360g spd65r360g.pdf
SPC65R360G,SPE65R360G,SPD65R360G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 360 DS(on) GS ID=11.5A(Vgs=10V) Q max. (nC) 30 g Ultra Low Gate Charge Q (nC) 8.5 gs Improved dv/dt Capability Q (nC) 7.5 gd
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: OSG90R1K2AF | OSS65R340DF | FHU4N65A
