All MOSFET. SPD65R360G Datasheet

 

SPD65R360G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPD65R360G
   Marking Code: 65R360G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO252

 SPD65R360G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD65R360G Datasheet (PDF)

 ..1. Size:718K  cn sinai power
 spc65r360g spe65r360g spd65r360g.pdf

SPD65R360G SPD65R360G

SPC65R360G,SPE65R360G,SPD65R360G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 360 DS(on) GS ID=11.5A(Vgs=10V) Q max. (nC) 30 g Ultra Low Gate Charge Q (nC) 8.5 gs Improved dv/dt Capability Q (nC) 7.5 gd

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SPD04N60S5

 

 
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