SPD7N65G PDF and Equivalents Search

 

SPD7N65G Specs and Replacement

Type Designator: SPD7N65G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO252

SPD7N65G substitution

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SPD7N65G datasheet

 ..1. Size:920K  cn sinai power
 spd7n65g.pdf pdf_icon

SPD7N65G

SPD7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC ( ) V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli... See More ⇒

Detailed specifications: SPC65R360G, SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G, AO4407, SPE4N65G, SPE7N65G, TDM31035, TDM31050, TDM31056, TDM31058, TDM31064, TDM31066

Keywords - SPD7N65G MOSFET specs

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