TDM31058 Datasheet and Replacement
Type Designator: TDM31058
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 405 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SOP8
TDM31058 substitution
TDM31058 Datasheet (PDF)
tdm31058.pdf

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM31058DESCRIPTIONTheTDM31058usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
tdm31050.pdf

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM31050DESCRIPTIONTheTDM31050usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
tdm31056.pdf

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM31056DESCRIPTIONTheTDM31056usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
tdm31035.pdf

DATASHEETTechcodeP-Channel Enhancement Mode MOSFET TDM31035DESCRIPTIONTheTDM31035usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES 100V/13ARDS(ON)
Datasheet: SPD3N80G , SPD5N50G , SPD7N65G , SPE4N65G , SPE7N65G , TDM31035 , TDM31050 , TDM31056 , STP80NF70 , TDM31064 , TDM31066 , TDM3307A , TDM3404 , TDM3405 , TDM3406 , TDM3407 , TDM3408 .
History: RU190N10R | IRF820ASPBF
Keywords - TDM31058 MOSFET datasheet
TDM31058 cross reference
TDM31058 equivalent finder
TDM31058 lookup
TDM31058 substitution
TDM31058 replacement
History: RU190N10R | IRF820ASPBF



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