All MOSFET. TDM3430 Datasheet

 

TDM3430 Datasheet and Replacement


   Type Designator: TDM3430
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO263
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TDM3430 Datasheet (PDF)

 ..1. Size:205K  techcode semi
 tdm3430.pdf pdf_icon

TDM3430

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3430DESCRIPTIONTheTDM3430usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.1. Size:368K  techcode semi
 tdm3436.pdf pdf_icon

TDM3430

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3436DESCRIPTIONTheTDM3436usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.2. Size:375K  techcode semi
 tdm3434.pdf pdf_icon

TDM3430

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3434DESCRIPTIONTheTDM3434usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.3. Size:370K  techcode semi
 tdm3432.pdf pdf_icon

TDM3430

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3432DESCRIPTIONTheTDM3432usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

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