TDM3432 MOSFET. Datasheet pdf. Equivalent
Type Designator: TDM3432
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO263
TDM3432 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TDM3432 Datasheet (PDF)
tdm3432.pdf
DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3432DESCRIPTIONTheTDM3432usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
tdm3436.pdf
DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3436DESCRIPTIONTheTDM3436usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
tdm3434.pdf
DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3434DESCRIPTIONTheTDM3434usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
tdm3430.pdf
DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3430DESCRIPTIONTheTDM3430usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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