TF2305B
MOSFET. Datasheet pdf. Equivalent
Type Designator: TF2305B
Marking Code: A5BTF*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 112
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT23
TF2305B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2305B
Datasheet (PDF)
..1. Size:623K cn tuofeng
tf2305b.pdf 
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2305BTF2305B P-Channel 16-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.060@-4.5V-16V -4.0A30.080@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA5BTF wAPPLICATION
9.1. Size:57K ixys
ixtf230n085t.pdf
Advance Technical InformationVDSS = 85 VIXTF230N085TTrenchMVTMID25 = 130 APower MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeISOPLUS i4-PakTM (5-lead) (IXTF)Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 85 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Tran
9.2. Size:703K cn tuofeng
tf2301a.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301ATF2301A P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.085@-4.5V-20V -3.0A30.110@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA1 wAPPLICATIONL
9.3. Size:627K cn tuofeng
tf2307.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2307TF2307 P-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.075@-10V-30V -3.5A30.095@-4.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA79TF wAPPLICATIONL
9.4. Size:615K cn tuofeng
tf2302a.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302AN-Channel 20-V(D-S) MOSFETTF2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad
9.5. Size:595K cn tuofeng
tf2302.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302TF2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad
9.6. Size:4217K cn tuofeng
tf2300.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETTF2300N-Channel 20-V(D-S) MOSFETTF2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface
9.7. Size:2967K cn tuofeng
tf2306.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2306N-Channel 30-V(D-S) MOSFETTF2306V(BR)DSS RDS(on)MAX IDSOT-230.057@ 10V330V3.6 A1.GATE0.094@ 4.5 V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitLead free product is acquiredMARKINGSurface mount packageA69TF wAPPLICATION
9.8. Size:677K cn tuofeng
tf2301.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301TF2301 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.8A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount package-A1sHB wAPPLICATION
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