TF2310 Specs and Replacement

Type Designator: TF2310

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT23

TF2310 substitution

- MOSFET ⓘ Cross-Reference Search

 

TF2310 datasheet

 ..1. Size:3261K  cn tuofeng
 tf2310.pdf pdf_icon

TF2310

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2310 N-Channel 60-V(D-S) MOSFET TF2310 V(BR)DSS RDS(on)MAX ID SOT-23 0.090 @ 10V 3 60V 3.0 A 1.GATE 0.120 @ 4.5 V 2.SOURCE 3.DRAIN 1 2 General Features VDS =60V,ID =3A RDS(ON) ... See More ⇒

 9.1. Size:1104K  cn tuofeng
 tf2312.pdf pdf_icon

TF2310

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2312 N-Channel 20-V(D-S) MOSFET TF2312 V(BR)DSS RDS(on)MAX ID SOT-23 0.031 @ 4.5V 3 1.GATE 20V 0.037 @ 2.5V 5.0A 2.SOURCE 3.DRAIN 0.047 @ 1.8V 1 2 General FEATURE TrenchFET Power MOSFET Equivalent Circuit MARKING Lead free product is acquired Surface mount package AE9TF w A... See More ⇒

 9.2. Size:2849K  cn tuofeng
 tf2317.pdf pdf_icon

TF2310

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2317 TF2317 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.028 @-4.5V 3 0.038 @-2.5V -4.5A -20V 1.GATE 2.SOURCE 0.050 @-1.8V 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package w ... See More ⇒

Detailed specifications: TDM3736, TDM3742, TDM3744, TF2300, TF2301, TF2302, TF2305B, TF2306, IRF540, TF3400, TF3401, TF3402, TF3407, TF3414, TF3415, TF3423, TW0115SR-Y

Keywords - TF2310 MOSFET specs

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