TW7407FL-Y
MOSFET. Datasheet pdf. Equivalent
Type Designator: TW7407FL-Y
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 441
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package: PDFN3X3-8L
TW7407FL-Y
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TW7407FL-Y
Datasheet (PDF)
..1. Size:1108K cn twgmc
tw7407fl-y.pdf
TW7407FL-YP-Channel Enhancement Mode Power MOSFET Features General Description VDS = -30V, DC/DC Converters in Computing, Servers, and POL ID = -50A Isolated DC/DC Converters in Telecom and Industrial RDS(ON) @VGS= -10V, TYP 6m RDS(ON) @VGS= -4.5V, TYP 10.3m Pin Configurations PDFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted
9.1. Size:1093K cn twgmc
tw7404fj.pdf
TW7404FJN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 30V, Synchronus Rectification in DC/DC and AC/DC Converters ID = 83.5A Industrial and Motor Drive applications RDS(ON) @VGS= 10V, TYP 2.5m RDS(ON) @VGS= 4.5V, TYP 3.3m Pin Configurations DFN5*6-8L Absolute Maximum Ratings @T =25 unless otherwise noted APara
9.2. Size:1063K cn twgmc
tw7408fn.pdf
TW7408FNN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 30V, load switch ID = 68A battery protection applications RDS(ON) @VGS= 10V, TYP 2.9m RDS(ON) @VGS= 4.5V, TYP 4.8m Pin Configurations TDFN3.3*3.3-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Source Voltage
Datasheet: WPB4002
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