TWS6428FJ Datasheet and Replacement
Type Designator: TWS6428FJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 46.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 157 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN5X6-8L
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TWS6428FJ Datasheet (PDF)
tws6428fj.pdf

TWS6428FJN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 30V, DC/DC conversion ID = 49A Battery protection . RDS(ON) @VGS= 10V, Max 7m Load switching RDS(ON) @VGS= 4.5V, Max 10.8m DC/AC inverters Pin Configurations DFN5*6-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Rat
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: GSM1032 | NVTFS9D6P04M8L | P2206BT | 2SK756 | 2N6793LCC4 | 2SK3930-01L | EFC6611R-TF
Keywords - TWS6428FJ MOSFET datasheet
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History: GSM1032 | NVTFS9D6P04M8L | P2206BT | 2SK756 | 2N6793LCC4 | 2SK3930-01L | EFC6611R-TF



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