TWS6428FJ MOSFET. Datasheet pdf. Equivalent
Type Designator: TWS6428FJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 46.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.8 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 157 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN5X6-8L
TWS6428FJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TWS6428FJ Datasheet (PDF)
tws6428fj.pdf
TWS6428FJN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 30V, DC/DC conversion ID = 49A Battery protection . RDS(ON) @VGS= 10V, Max 7m Load switching RDS(ON) @VGS= 4.5V, Max 10.8m DC/AC inverters Pin Configurations DFN5*6-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Rat
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