SL17N06D Datasheet and Replacement
Type Designator: SL17N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO252
SL17N06D Datasheet (PDF)
sl17n06d.pdf

SL17N06DN-Channel Power MOSFET General Features VDS =60V,ID =17ARDS(ON)
sl17n06dn1.pdf

SL17N06DN1N-Channel Power MOSFET General Features VDS =60V,ID =17ARDS(ON)
irfb17n20dpbf irfsl17n20dpbf.pdf

PD- 95325IRFB17N20DPbF IRFS17N20DPbFSMPS MOSFET IRFSL17N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17 16Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanch
irfb17n20d irfs17n20d irfsl17n20d.pdf

PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
Datasheet: SL11N65CK , SL11N65C , SL11N65CF , SL11P06D , SL130N04Q , SL13N45F , SL13N50FS , SL150N03Q , TK10A60D , SL17N06DN1 , SL19N120A , SL21N65CK , SL21N65C , SL21N65CF , SL2300 , SL2301 , SL2301S .
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