All MOSFET. SL17N06DN1 Datasheet

 

SL17N06DN1 Datasheet and Replacement


   Type Designator: SL17N06DN1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm
   Package: TO252
 

 SL17N06DN1 substitution

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SL17N06DN1 Datasheet (PDF)

 ..1. Size:631K  slkor
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SL17N06DN1

SL17N06DN1N-Channel Power MOSFET General Features VDS =60V,ID =17ARDS(ON)

 6.1. Size:642K  slkor
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SL17N06DN1

SL17N06DN-Channel Power MOSFET General Features VDS =60V,ID =17ARDS(ON)

 9.1. Size:278K  international rectifier
 irfb17n20dpbf irfsl17n20dpbf.pdf pdf_icon

SL17N06DN1

PD- 95325IRFB17N20DPbF IRFS17N20DPbFSMPS MOSFET IRFSL17N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17 16Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanch

 9.2. Size:140K  international rectifier
 irfb17n20d irfs17n20d irfsl17n20d.pdf pdf_icon

SL17N06DN1

PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

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Datasheet: SL11N65C , SL11N65CF , SL11P06D , SL130N04Q , SL13N45F , SL13N50FS , SL150N03Q , SL17N06D , 5N60 , SL19N120A , SL21N65CK , SL21N65C , SL21N65CF , SL2300 , SL2301 , SL2301S , SL2302 .

History: NCEP01T11 | IRF6614

Keywords - SL17N06DN1 MOSFET datasheet

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