SL17N06DN1 Specs and Replacement
Type Designator: SL17N06DN1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm
Package: TO252
SL17N06DN1 substitution
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SL17N06DN1 datasheet
sl17n06dn1.pdf
SL17N06DN1 N-Channel Power MOSFET General Features VDS =60V,ID =17A RDS(ON) ... See More ⇒
sl17n06d.pdf
SL17N06D N-Channel Power MOSFET General Features VDS =60V,ID =17A RDS(ON) ... See More ⇒
irfb17n20dpbf irfsl17n20dpbf.pdf
PD- 95325 IRFB17N20DPbF IRFS17N20DPbF SMPS MOSFET IRFSL17N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17 16A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanch... See More ⇒
irfb17n20d irfs17n20d irfsl17n20d.pdf
PD- 93902A IRFB17N20D IRFS17N20D SMPS MOSFET IRFSL17N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T... See More ⇒
Detailed specifications: SL11N65C, SL11N65CF, SL11P06D, SL130N04Q, SL13N45F, SL13N50FS, SL150N03Q, SL17N06D, AON7410, SL19N120A, SL21N65CK, SL21N65C, SL21N65CF, SL2300, SL2301, SL2301S, SL2302
Keywords - SL17N06DN1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APT1001R2HN
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