SL17N06DN1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SL17N06DN1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.3 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm
Package: TO252
SL17N06DN1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL17N06DN1 Datasheet (PDF)
sl17n06dn1.pdf
SL17N06DN1N-Channel Power MOSFET General Features VDS =60V,ID =17ARDS(ON)
sl17n06d.pdf
SL17N06DN-Channel Power MOSFET General Features VDS =60V,ID =17ARDS(ON)
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PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
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