SL19N120A MOSFET. Datasheet pdf. Equivalent

   Type Designator: SL19N120A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 14.4 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: TO247

SL19N120A Transistor Equivalent Substitute - MOSFET Cross-Reference Search