SL2308 Specs and Replacement
Type Designator: SL2308
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT23
SL2308 substitution
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SL2308 datasheet
sl2308.pdf
SL2308 60V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE 60V/1 . 8 A, RDS(ON) =1 35m (typ.)@VGS=1 0V The SL2308 is the N-Channel logic enhancement =1 54m (typ.)@VGS=4.5V 60V/ 1 ..5 A, R DS(ON) mode power field effect transistor is produced using Super high design for extremely low RDS(ON) high cell density advanced trench technology.. Exc... See More ⇒
fsl230.pdf
FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒
sl2309.pdf
SL2309 P-Channel Power MOSFET General Features VDS =-60V,ID =-1.6A RDS(ON) ... See More ⇒
sl2302m.pdf
SL2302M 20V N-Channel MOSFET Circuit diagram Product Summary V R I (BR)DSS DS(on)MAX D 110m @4.5V 20V 150m @2.5V 1.2A Feature Package Surface Mount Package N-Channel Switch with Low R (on) DS Operated at Low Logic Level Gate Drive ESD Protected Application SOT-723 Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portab... See More ⇒
Detailed specifications: SL2301, SL2301S, SL2302, SL2302S, SL2304, SL2305, SL2306, SL2307, BS170, SL2310, SL2312, SL2N65F, SL3400, SL3401, SL3401A, SL3401S, SL3402
Keywords - SL2308 MOSFET specs
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History: VBZMB12N65 | HCU7NE70S
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