SL230860V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE 60V/1 . 8 A, RDS(ON) =1 35m(typ.)@VGS=1 0V The SL2308 is the N-Channel logic enhancement =1 54m (typ.)@VGS=4.5V 60V/ 1 ..5 A, R DS(ON)mode power field effect transistor is produced using Super high design for extremely low RDS(ON)high cell density advanced trench technology.. Exc

FSL230D, FSL230R5A, 200V, 0.460 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

SL2309P-Channel Power MOSFET General Features VDS =-60V,ID =-1.6A RDS(ON)

SL2302M20V N-Channel MOSFETCircuit diagramProduct SummaryV R I(BR)DSS DS(on)MAX D110m@4.5V20V 150m@2.5V 1.2AFeaturePackage Surface Mount Package N-Channel Switch with Low R (on)DS Operated at Low Logic Level Gate Drive ESD ProtectedApplication SOT-723 Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portab

SL2300N-Channel Power MOSFET DGeneral Features VDS = 20V,ID = 4.2A GRDS(ON)

SL2306N-Channel Power MOSFET MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source VoltageBV 20 VDSSGate- Source VoltageV +10 VGSDrain Current (continuous)I 4 ADDrain Current (pulsed)I 15 ADMTotal Device DissipationPD 1200 mWTA=25JunctionT 150 JSolder Temperature/Solder TimeT/t 260/10 /

SL2302SSOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3

SL2305P-Channel Power MOSFET DGeneral Features G VDS = -20V,ID = -4.1A RDS(ON)

SL2301P-Channel Power MOSFET DGeneral Features VDS = -20V,ID = -2.8A GRDS(ON)

SL2301SSOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3

SL2307P-Channel MOSFETID V(BR)DSS RDS(on)MAX Equivalent Circuit \60m@-10 V-4.1A-30V 87m@-4.5VSOT-23General Description The SL2307 uses adva nced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN DMaximum ratings (Ta=25 unless otherwi

SL2302N-Channel Power MOSFET General Features VDS = 20V,ID = 2.8 A RDS(ON)

SL2304N-Channel MOSFETV(BR)DSS RDS(on)MAX ID60m@10V30 V 3.3A75m@4.5VFEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC ConverterEquivalent Circuit1.GATE2.SOURCE3.DRAINMaximum ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain

SL2309AP-Channel 60-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID-60V 165m@ 10V -2.0AEquivalent CircuitFEATURE TrenchFET Power MOSFETAPPLICATION Load Switch for Portable Devices DC/DC Converter1.GATE2.SOURCE3.DRAINAbsolute Maximum Ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 V