SL2310 Specs and Replacement

Type Designator: SL2310

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SOT23

SL2310 substitution

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SL2310 datasheet

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 sl2310.pdf pdf_icon

SL2310

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 sl2314.pdf pdf_icon

SL2310

SL2314 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SL2314 is the N-Channel logic enhancement 20V/4.5A, RDS(ON)=25m (typ.)@VGS=4.5V m mode power field effect transistor is produced using 20V/2.5A, RDS(ON)=55 (typ.)@VGS=2.5V high cell density advanced trench technology.. 20V/2.0A, RDS(ON)=80m (typ.)@VGS=1.8V This high density process is ... See More ⇒

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 sl2319a.pdf pdf_icon

SL2310

SL2319A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -40V DS I -4.4A D R ( at V =-10V) 90mohm DS(ON) GS R ( at V =-4.5V) DS(ON) GS 150mohm General Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Absolute Maximum Ratings (T =25 unless otherwise noted) A P... See More ⇒

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 sl2318.pdf pdf_icon

SL2310

SL2318 40V/4.1A N Channel Advanced Power MOSFET Features V(BR)DSS RDS(ON) Typ ID Max Low RDS(on) @VGS=10V 4.5V Logic Level Control 29m @ 10V N Channel SOT23 Package 40V 4.1A 36m @ 4.5V Pb-Free, RoHS Compliant Applications Load Switch DC/DC Converter Switching Circuits Power Management Order Information SOT23 Marking Product Package Pack... See More ⇒

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Detailed specifications: SL2301S, SL2302, SL2302S, SL2304, SL2305, SL2306, SL2307, SL2308, 4N60, SL2312, SL2N65F, SL3400, SL3401, SL3401A, SL3401S, SL3402, SL3404

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.