SL2310N-Channel Power MOSFET DGeneral Features G VDS =60V,ID =3A RDS(ON)

SL231420V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SL2314 is the N-Channel logic enhancement 20V/4.5A, RDS(ON)=25m (typ.)@VGS=4.5V mmode power field effect transistor is produced using 20V/2.5A, RDS(ON)=55 (typ.)@VGS=2.5V high cell density advanced trench technology.. 20V/2.0A, RDS(ON)=80m (typ.)@VGS=1.8V This high density process is

SL2319AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -40VDS I -4.4AD R ( at V =-10V) 90mohmDS(ON) GS R ( at V =-4.5V)DS(ON) GS 150mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Absolute Maximum Ratings (T =25unless otherwise noted)AP

SL231840V/4.1A N Channel Advanced Power MOSFETFeatures V(BR)DSS RDS(ON) Typ ID Max Low RDS(on) @VGS=10V 4.5V Logic Level Control 29m @ 10V N Channel SOT23 Package 40V 4.1A36m @ 4.5V Pb-Free, RoHS Compliant Applications Load Switch DC/DC Converter Switching CircuitsPower ManagementOrder Information SOT23 Marking Product Package Pack

SL2312SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3