SL2N65F MOSFET. Datasheet pdf. Equivalent
Type Designator: SL2N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
Package: TO220F
SL2N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL2N65F Datasheet (PDF)
sl2n65f.pdf
SL2N65FN-Channel Power MOSFET Features 2.0A, 650V, R =4.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche TestedSchematic diagram Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionTO-220FAbsolute Maximum Ratings(Tc=25C unless otherwise
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AM5423P | CS2837AND | EV2315 | IPP65R190CFDA
History: AM5423P | CS2837AND | EV2315 | IPP65R190CFDA
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918