All MOSFET. SL2N65F Datasheet

 

SL2N65F MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL2N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: TO220F

 SL2N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL2N65F Datasheet (PDF)

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sl2n65f.pdf

SL2N65F
SL2N65F

SL2N65FN-Channel Power MOSFET Features 2.0A, 650V, R =4.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche TestedSchematic diagram Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionTO-220FAbsolute Maximum Ratings(Tc=25C unless otherwise

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AM5423P | CS2837AND | EV2315 | IPP65R190CFDA

 

 
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