SL2N65F MOSFET. Datasheet pdf. Equivalent
Type Designator: SL2N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
Package: TO220F
SL2N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL2N65F Datasheet (PDF)
sl2n65f.pdf
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SL2N65FN-Channel Power MOSFET Features 2.0A, 650V, R =4.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche TestedSchematic diagram Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionTO-220FAbsolute Maximum Ratings(Tc=25C unless otherwise
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