SL420NPD MOSFET. Datasheet pdf. Equivalent
Type Designator: SL420NPD
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.5 nC
trⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO252-4
SL420NPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL420NPD Datasheet (PDF)
sl420npd.pdf
SL420NPDAGM420MDN-Channel and P-Channel MOSFET Product Summary General DescriptionThe SL420NPD combines advanced trenchBVDSS RDSON IDMOSFET technology with a low resistancepackage to provide extremely low RDS(ON) . This40V 14m 30Adevice is ideal for load switch and battery-40V 28m -28Aprotection applications. Features Advance high cell density Trench
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918