SL420NPD MOSFET. Datasheet pdf. Equivalent
Type Designator: SL420NPD
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5.5 nC
Rise Time (tr): 2.2 nS
Drain-Source Capacitance (Cd): 76 pF
Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm
Package: TO252-4
SL420NPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL420NPD Datasheet (PDF)
..1. sl420npd.pdf Size:1288K _slkor
SL420NPDAGM420MDN-Channel and P-Channel MOSFET Product Summary General DescriptionThe SL420NPD combines advanced trenchBVDSS RDSON IDMOSFET technology with a low resistancepackage to provide extremely low RDS(ON) . This40V 14m 30Adevice is ideal for load switch and battery-40V 28m -28Aprotection applications. Features Advance high cell density Trench
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .



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