All MOSFET. 2N06L09P Datasheet

 

2N06L09P Datasheet and Replacement


   Type Designator: 2N06L09P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220
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2N06L09P Datasheet (PDF)

 ..1. Size:288K  inchange semiconductor
 2n06l09p.pdf pdf_icon

2N06L09P

isc N-Channel MOSFET Transistor 2N06L09PFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

 7.1. Size:356K  inchange semiconductor
 2n06l09b.pdf pdf_icon

2N06L09P

isc N-Channel MOSFET Transistor 2N06L09BFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

 8.1. Size:288K  inchange semiconductor
 2n06l07p.pdf pdf_icon

2N06L09P

isc N-Channel MOSFET Transistor 2N06L07PFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.2. Size:356K  inchange semiconductor
 2n06l07b.pdf pdf_icon

2N06L09P

isc N-Channel MOSFET Transistor 2N06L07BFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

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History: IPP048N04NG

Keywords - 2N06L09P MOSFET datasheet

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