2N06L09P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N06L09P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 190 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm
Тип корпуса: TO220
2N06L09P Datasheet (PDF)
2n06l09p.pdf
isc N-Channel MOSFET Transistor 2N06L09PFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
2n06l09b.pdf
isc N-Channel MOSFET Transistor 2N06L09BFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
2n06l07p.pdf
isc N-Channel MOSFET Transistor 2N06L07PFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2n06l07b.pdf
isc N-Channel MOSFET Transistor 2N06L07BFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
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