2SK2832-01 PDF and Equivalents Search

 ..1. Size:206K  1
 2sk2832-01.pdf

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 7.1. Size:289K  inchange semiconductor
 2sk2832.pdf

isc N-Channel MOSFET Transistor 2SK2832 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.1. Size:185K  1
 2sk2833-r.pdf

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 8.2. Size:77K  1
 2sk2834-01.pdf

FUJI POWER MOSFET 2SK2834-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=... See More ⇒

 8.3. Size:399K  toshiba
 2sk2835.pdf

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2835 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.56 (typ.) (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V... See More ⇒

 8.4. Size:426K  toshiba
 2sk2837.pdf

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.21 (typ.) (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V... See More ⇒

 8.5. Size:133K  toshiba
 2sk2839.pdf

2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2839 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gatedrive Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 30 V) DS Enhancement-mode ... See More ⇒

 8.6. Size:413K  toshiba
 2sk2838.pdf

2SK2838 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2838 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.84 (typ.) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V ... See More ⇒

 8.7. Size:420K  toshiba
 2sk2836.pdf

2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2836 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 6.4 (typ.) (ON) High forward transfer admittance Y = 0.85 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 ... See More ⇒

 8.8. Size:279K  inchange semiconductor
 2sk2830.pdf

isc N-Channel MOSFET Transistor 2SK2830 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.9. Size:356K  inchange semiconductor
 2sk2838b.pdf

isc N-Channel MOSFET Transistor 2SK2838B FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.10. Size:331K  inchange semiconductor
 2sk2834w.pdf

isc N-Channel MOSFET Transistor 2SK2834W FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.11. Size:282K  inchange semiconductor
 2sk2838k.pdf

isc N-Channel MOSFET Transistor 2SK2838K FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.12. Size:273K  inchange semiconductor
 2sk2833.pdf

isc N-Channel MOSFET Transistor 2SK2833 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.13. Size:287K  inchange semiconductor
 2sk2834n.pdf

isc N-Channel MOSFET Transistor 2SK2834N FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒