2SK2832-01 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2832-01
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 80 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 920 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: TO220
Аналог (замена) для 2SK2832-01
2SK2832-01 Datasheet (PDF)
2sk2832.pdf
isc N-Channel MOSFET Transistor 2SK2832FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk2834-01.pdf
FUJI POWER MOSFET2SK2834-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=
2sk2835.pdf
2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2835 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.56 (typ.) (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V
2sk2837.pdf
2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V
2sk2839.pdf
2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2839 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gatedrive Low drain-source ON resistance : R = 30 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 30 V) DS Enhancement-mode :
2sk2838.pdf
2SK2838 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2838 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.84 (typ.) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V
2sk2836.pdf
2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2836 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 6.4 (typ.) (ON) High forward transfer admittance : |Y | = 0.85 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0
2sk2830.pdf
isc N-Channel MOSFET Transistor 2SK2830FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2838b.pdf
isc N-Channel MOSFET Transistor 2SK2838BFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2834w.pdf
isc N-Channel MOSFET Transistor 2SK2834WFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2838k.pdf
isc N-Channel MOSFET Transistor 2SK2838KFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2833.pdf
isc N-Channel MOSFET Transistor 2SK2833FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2834n.pdf
isc N-Channel MOSFET Transistor 2SK2834NFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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