Справочник MOSFET. 2SK2832-01

 

2SK2832-01 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2832-01
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 920 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO220

 Аналог (замена) для 2SK2832-01

 

 

2SK2832-01 Datasheet (PDF)

 ..1. Size:206K  1
2sk2832-01.pdf

2SK2832-01
2SK2832-01

 7.1. Size:289K  inchange semiconductor
2sk2832.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2832FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.1. Size:185K  1
2sk2833-r.pdf

2SK2832-01
2SK2832-01

 8.2. Size:77K  1
2sk2834-01.pdf

2SK2832-01
2SK2832-01

FUJI POWER MOSFET2SK2834-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=

 8.3. Size:399K  toshiba
2sk2835.pdf

2SK2832-01
2SK2832-01

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2835 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.56 (typ.) (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V

 8.4. Size:426K  toshiba
2sk2837.pdf

2SK2832-01
2SK2832-01

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V

 8.5. Size:133K  toshiba
2sk2839.pdf

2SK2832-01
2SK2832-01

2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2839 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gatedrive Low drain-source ON resistance : R = 30 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 30 V) DS Enhancement-mode :

 8.6. Size:413K  toshiba
2sk2838.pdf

2SK2832-01
2SK2832-01

2SK2838 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2838 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.84 (typ.) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V

 8.7. Size:420K  toshiba
2sk2836.pdf

2SK2832-01
2SK2832-01

2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2836 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 6.4 (typ.) (ON) High forward transfer admittance : |Y | = 0.85 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0

 8.8. Size:279K  inchange semiconductor
2sk2830.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2830FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.9. Size:356K  inchange semiconductor
2sk2838b.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2838BFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.10. Size:331K  inchange semiconductor
2sk2834w.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2834WFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.11. Size:282K  inchange semiconductor
2sk2838k.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2838KFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.12. Size:273K  inchange semiconductor
2sk2833.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2833FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.13. Size:287K  inchange semiconductor
2sk2834n.pdf

2SK2832-01
2SK2832-01

isc N-Channel MOSFET Transistor 2SK2834NFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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