All MOSFET. NDD04N60Z-1G Datasheet

 

NDD04N60Z-1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDD04N60Z-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251

 NDD04N60Z-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDD04N60Z-1G Datasheet (PDF)

 ..1. Size:327K  inchange semiconductor
 ndd04n60z-1g.pdf

NDD04N60Z-1G NDD04N60Z-1G

isc N-Channel MOSFET Transistor NDD04N60Z-1GFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

 5.1. Size:291K  1
 ndf04n60z ndd04n60z.pdf

NDD04N60Z-1G NDD04N60Z-1G

NDF04N60Z, NDD04N60ZPower MOSFET, N-Channel, 600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParam

 5.2. Size:148K  1
 ndf04n60z ndp04n60z ndd04n60z.pdf

NDD04N60Z-1G NDD04N60Z-1G

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS

 5.3. Size:136K  onsemi
 ndf04n60z ndd04n60z.pdf

NDD04N60Z-1G NDD04N60Z-1G

NDF04N60Z, NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParamete

 5.4. Size:130K  onsemi
 ndf04n60z ndp04n60z ndd04n60z.pdf

NDD04N60Z-1G NDD04N60Z-1G

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (

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