7788
MOSFET. Datasheet pdf. Equivalent
Type Designator: 7788
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 4.5
nS
Cossⓘ -
Output Capacitance: 340
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package: PDFN3X3-8
7788
Datasheet (PDF)
..1. Size:3750K cn tuofeng
7788.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN-Channel Enhancement Mode Power MOSFET 778830V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS30V40A ID (at VGS=10V)
0.1. Size:4509K 1
jsm7788.pdf
JSM7788N-Channel Enhancement Mode Power MOSFET 30V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS30V40A ID (at VGS=10V)
0.2. Size:417K fairchild semi
fds7788.pdf
August 2008FDS778830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 18 A, 30 V. RDS(ON) = 4.0 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 5.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge
0.3. Size:510K vishay
si7788dp.pdf
New ProductSi7788DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET RoHS0.0031 at VGS = 10 V 50 100 % Rg and UIS TestedCOMPLIANT 30 37 nC0.0041 at VGS = 4.5 V 50APPLICATIONSPowerPAK SO-8 Low-Side DC/DC Conversion- Notebook- GamingD S
0.4. Size:277K aosemi
aon7788.pdf
AON778830V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is
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