All MOSFET. 7788 Datasheet

 

7788 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 7788
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN3X3-8

 7788 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

7788 Datasheet (PDF)

 ..1. Size:3750K  cn tuofeng
 7788.pdf

7788 7788

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN-Channel Enhancement Mode Power MOSFET 778830V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS30V40A ID (at VGS=10V)

 0.1. Size:4509K  1
 jsm7788.pdf

7788 7788

JSM7788N-Channel Enhancement Mode Power MOSFET 30V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS30V40A ID (at VGS=10V)

 0.2. Size:417K  fairchild semi
 fds7788.pdf

7788 7788

August 2008FDS778830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 18 A, 30 V. RDS(ON) = 4.0 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 5.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge

 0.3. Size:510K  vishay
 si7788dp.pdf

7788 7788

New ProductSi7788DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET RoHS0.0031 at VGS = 10 V 50 100 % Rg and UIS TestedCOMPLIANT 30 37 nC0.0041 at VGS = 4.5 V 50APPLICATIONSPowerPAK SO-8 Low-Side DC/DC Conversion- Notebook- GamingD S

 0.4. Size:277K  aosemi
 aon7788.pdf

7788 7788

AON778830V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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