S8205B Datasheet and Replacement

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-6 Plastic-Encapsulate MOSFETS S8205B S8205B Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.017 @ 4.5V20V6.0A0.021 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLI

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6VDS=19.5V,ID=6A RDS(ON)

PS8205B 20V Dual Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS8205B 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205B uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC convertersgate charge. This

VS8205BH 16V/5.5A N-Channel Advanced Power MOSFET Features V DS 16 V R DS(on),TYP@ VGS=4.5 V 28 m Enhancement mode R DS(on),TYP@ VGS=2.5 V 37 m Low on-resistance RDS(on) @ VGS=2.5 V I D 5.5 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant SOT23-6L Tape and reel Part ID Package Type Marking information VS8205BH SOT23-