S8205B - аналоги, параметры транзистора - Справочник транзисторов

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205B S8205B Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.017 @ 4.5V 20V 6.0A 0.021 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLI

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6 VDS=19.5V,ID=6A RDS(ON)

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PS8205B 20V Dual Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS8205B 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205B uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This

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VS8205BH 16V/5.5A N-Channel Advanced Power MOSFET Features V DS 16 V R DS(on),TYP@ VGS=4.5 V 28 m Enhancement mode R DS(on),TYP@ VGS=2.5 V 37 m Low on-resistance RDS(on) @ VGS=2.5 V I D 5.5 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant SOT23-6L Tape and reel Part ID Package Type Marking information VS8205BH SOT23-

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