TF2317 Datasheet. Specs and Replacement
Type Designator: TF2317 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23
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TF2317 substitution
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TF2317 datasheet
tf2317.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2317 TF2317 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.028 @-4.5V 3 0.038 @-2.5V -4.5A -20V 1.GATE 2.SOURCE 0.050 @-1.8V 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package w ... See More ⇒
tf2312.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2312 N-Channel 20-V(D-S) MOSFET TF2312 V(BR)DSS RDS(on)MAX ID SOT-23 0.031 @ 4.5V 3 1.GATE 20V 0.037 @ 2.5V 5.0A 2.SOURCE 3.DRAIN 0.047 @ 1.8V 1 2 General FEATURE TrenchFET Power MOSFET Equivalent Circuit MARKING Lead free product is acquired Surface mount package AE9TF w A... See More ⇒
tf2310.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2310 N-Channel 60-V(D-S) MOSFET TF2310 V(BR)DSS RDS(on)MAX ID SOT-23 0.090 @ 10V 3 60V 3.0 A 1.GATE 0.120 @ 4.5 V 2.SOURCE 3.DRAIN 1 2 General Features VDS =60V,ID =3A RDS(ON) ... See More ⇒
Detailed specifications: SIA517, SLP6N70U, SLF6N70U, TF2015, TF2301A, TF2302A, TF2307, TF2312, MMIS60R580P, TF2323, TF2333, TF2341, TF2369, TF3404, TF3410, TF3420, TF68N75
Keywords - TF2317 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FCH47N60F | AP30P03D | AP45P06NF
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