TF2317
MOSFET. Datasheet pdf. Equivalent
Type Designator: TF2317
Marking Code: M17TF*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
SOT23
TF2317
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2317
Datasheet (PDF)
..1. Size:2849K cn tuofeng
tf2317.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-3L Plastic-Encapsulate MOSFETSTF2317TF2317 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.028@-4.5V30.038@-2.5V -4.5A-20V1.GATE2.SOURCE0.050 @-1.8V3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packagew
9.1. Size:1104K cn tuofeng
tf2312.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2312N-Channel 20-V(D-S) MOSFETTF2312V(BR)DSS RDS(on)MAX IDSOT-230.031@ 4.5V31.GATE20V0.037@ 2.5V 5.0A2.SOURCE3.DRAIN0.047@ 1.8V12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageAE9TF wA
9.2. Size:3261K cn tuofeng
tf2310.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2310N-Channel 60-V(D-S) MOSFETTF2310V(BR)DSS RDS(on)MAX IDSOT-230.090@ 10V360V3.0 A1.GATE0.120@ 4.5 V2.SOURCE3.DRAIN12General Features VDS =60V,ID =3A RDS(ON)
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
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, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.