TF3410
MOSFET. Datasheet pdf. Equivalent
Type Designator: TF3410
Marking Code: AA1TF*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
SOT23
TF3410
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF3410
Datasheet (PDF)
..1. Size:1464K cn tuofeng
tf3410.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETS3410TFTF N-Channel 30-V(D-S) MOSFET3410V(BR)DSS RDS(on)MAX IDSOT-230.028@ 10V31.GATE30V5.8A0.033@ 4.5V2.SOURCE3.DRAIN10.042@ 2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageAA1TF w
9.1. Size:1451K cn tuofeng
tf3415.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF3415P-Channel 15-V(D-S) MOSFETTF3415V(BR)DSS RDS(on)MAX IDSOT-23 SOT-23-3L/0.039@-4.5V3-15V 0.052@-2.5V-4.3A1.GATE2.SOURCE0.063@-1.8V3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packa
9.2. Size:2974K cn tuofeng
tf3414.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF3414N-Channel 20-V(D-S) MOSFETTF3414V(BR)DSS RDS(on)MAX IDSOT-230.030@ 4.5V320V4.2 A1.GATE0.040@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitLead free product is acquiredMARKINGSurface mount packageAE9TF wAPPLICATION
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