TF3420 MOSFET. Datasheet pdf. Equivalent
Type Designator: TF3420
Marking Code: AN3TF*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 66 pF
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: SOT23
TF3420 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF3420 Datasheet (PDF)
tf3420.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETS3420TFN-Channel 20-V(D-S) MOSFETTF3420V(BR)DSS RDS(on)MAX IDSOT-230.024@ 10V31.GATE20V6.0A0.027@ 4.5V2.SOURCE3.DRAIN10.035@ 2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageAN3TF w
tf3423.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF3423TF3423 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.0A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageAS3TF wAPPLICATION
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