ZVP2110G
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVP2110G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.31
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
SOT223
ZVP2110G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVP2110G
Datasheet (PDF)
..1. Size:108K diodes
zvp2110g.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T
0.1. Size:86K diodes
zvp2110gta zvp2110gtc.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T
7.1. Size:70K diodes
zvp2110a.pdf
P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis
7.2. Size:49K diodes
zvp2110astoa zvp2110astz.pdf
P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis
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