All MOSFET. SSM3K361R Datasheet

 

SSM3K361R MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3K361R
   Marking Code: KFT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 3.2 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: SOT23

 SSM3K361R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3K361R Datasheet (PDF)

 ..1. Size:233K  toshiba
ssm3k361r.pdf

SSM3K361R
SSM3K361R

SSM3K361RMOSFETs Silicon N-channel MOS (U-MOS-H)SSM3K361R1. Applications Power Management Switches DC-DC Converters2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) 175 MOSFET(3) 4.5 V drive(4) Low drain-source on-resistance: RDS(ON) = 65 m (typ.) (@VGS = 4.5 V) RDS(ON) = 51 m (typ.) (@VGS = 10 V)3. Packaging and Pin As

 7.1. Size:190K  toshiba
ssm3k36fs.pdf

SSM3K361R
SSM3K361R

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : Ron = 1.52 (max) (@VGS = 1.5 V) : Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) : Ron = 0.63 (max) (@VGS = 5.0 V) Absolute Maximum Rati

 7.2. Size:215K  toshiba
ssm3k36mfv.pdf

SSM3K361R
SSM3K361R

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV High-Speed Switching Applications Unit: mm 1.5-V drive 1.20.05 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 0.80.05: Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1: Ron = 0.63 (max) (@VGS = 5.0 V)

 7.3. Size:195K  toshiba
ssm3k36tu.pdf

SSM3K361R
SSM3K361R

SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 2.10.1: Ron = 1.14 (max) (@VGS = 1.8 V) 1.70.1: Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1: Ron = 0.63 (max) (@VGS = 5.0 V) 3

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HGD100N12SL

 

 
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