SSM3K361R - аналоги, параметры транзистора - Справочник транзисторов

SSM3K361R даташит

..1. Size:233K toshiba
ssm3k361r.pdf pdf_icon

SSM3K361R MOSFETs Silicon N-channel MOS (U-MOS -H) SSM3K361R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance RDS(ON) = 65 m (typ.) (@VGS = 4.5 V) RDS(ON) = 51 m (typ.) (@VGS = 10 V) 3. Packaging and Pin As

7.1. Size:190K toshiba
ssm3k36fs.pdf pdf_icon

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS High-Speed Switching Applications Unit mm 1.5-V drive Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) Absolute Maximum Rati

7.2. Size:215K toshiba
ssm3k36mfv.pdf pdf_icon

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV High-Speed Switching Applications Unit mm 1.5-V drive 1.2 0.05 Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) 0.8 0.05 Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 1 Ron = 0.63 (max) (@VGS = 5.0 V)

7.3. Size:195K toshiba
ssm3k36tu.pdf pdf_icon

SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU High-Speed Switching Applications Unit mm 1.5-V drive Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) 2.1 0.1 Ron = 1.14 (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 1 Ron = 0.63 (max) (@VGS = 5.0 V) 3

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