All MOSFET. SSM3K56ACT Datasheet

 

SSM3K56ACT Datasheet and Replacement


   Type Designator: SSM3K56ACT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 5.5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.235 Ohm
   Package: SOT883 CST3
 

 SSM3K56ACT substitution

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SSM3K56ACT Datasheet (PDF)

 ..1. Size:208K  toshiba
 ssm3k56act.pdf pdf_icon

SSM3K56ACT

SSM3K56ACTMOSFETs Silicon N-Channel MOSSSM3K56ACTSSM3K56ACTSSM3K56ACTSSM3K56ACT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

 7.1. Size:197K  toshiba
 ssm3k56mfv.pdf pdf_icon

SSM3K56ACT

SSM3K56MFVMOSFETs Silicon N-Channel MOSSSM3K56MFVSSM3K56MFVSSM3K56MFVSSM3K56MFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

 7.2. Size:198K  toshiba
 ssm3k56fs.pdf pdf_icon

SSM3K56ACT

SSM3K56FSMOSFETs Silicon N-Channel MOSSSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

 7.3. Size:203K  toshiba
 ssm3k56ct.pdf pdf_icon

SSM3K56ACT

SSM3K56CTMOSFETs Silicon N-Channel MOSSSM3K56CTSSM3K56CTSSM3K56CTSSM3K56CT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

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Datasheet: SSM3J351R , SSM3J356R , SSM3J358R , SSM3J56ACT , SSM3K344R , SSM3K345R , SSM3K35AMFV , SSM3K361R , IRFP260N , SSM3K7002CFU , SSM3K72KFS , SSM6J511NU , T2N7002AK , T2N7002BK , TK290P65Y , TK380P60Y , TK380P65Y .

History: JCS7HN65S | DMNH10H028SPSQ-13 | JCS7N60CB

Keywords - SSM3K56ACT MOSFET datasheet

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 SSM3K56ACT equivalent finder
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