SSM3K56ACT
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3K56ACT
Marking Code: SK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1
nC
tonⓘ - Turn-on Time: 5.5
nS
Cossⓘ -
Output Capacitance: 16
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.235
Ohm
Package:
SOT883
CST3
SSM3K56ACT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3K56ACT
Datasheet (PDF)
..1. Size:208K toshiba
ssm3k56act.pdf 
SSM3K56ACTMOSFETs Silicon N-Channel MOSSSM3K56ACTSSM3K56ACTSSM3K56ACTSSM3K56ACT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)
7.1. Size:197K toshiba
ssm3k56mfv.pdf
SSM3K56MFVMOSFETs Silicon N-Channel MOSSSM3K56MFVSSM3K56MFVSSM3K56MFVSSM3K56MFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)
7.2. Size:198K toshiba
ssm3k56fs.pdf
SSM3K56FSMOSFETs Silicon N-Channel MOSSSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48
7.3. Size:203K toshiba
ssm3k56ct.pdf
SSM3K56CTMOSFETs Silicon N-Channel MOSSSM3K56CTSSM3K56CTSSM3K56CTSSM3K56CT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48
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