TPHR9003NL MOSFET. Datasheet pdf. Equivalent
Type Designator: TPHR9003NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 220 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 2700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
Package: SOP8
TPHR9003NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPHR9003NL Datasheet (PDF)
..1. Size:223K toshiba
tphr9003nl.pdf
tphr9003nl.pdf
TPHR9003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPHR9003NLTPHR9003NLTPHR9003NLTPHR9003NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 16 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 1.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
