TPN11003NL MOSFET. Datasheet pdf. Equivalent
Type Designator: TPN11003NL
Marking Code: 11003NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 31 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.5 nC
trⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TSON8
TPN11003NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPN11003NL Datasheet (PDF)
tpn11003nl.pdf
TPN11003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN11003NLTPN11003NLTPN11003NLTPN11003NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 1
tpn11006nl.pdf
TPN11006NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN11006NLTPN11006NLTPN11006NLTPN11006NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 6.4 nC (typ.)(3) Low drain-source on-resi
tpn1110enh.pdf
TPN1110ENHMOSFETs Silicon N-channel MOS (U-MOS-H)TPN1110ENHTPN1110ENHTPN1110ENHTPN1110ENH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.6 nC (typ.)(3) Low drain-source on-resista
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