TPN1R603PL MOSFET. Datasheet pdf. Equivalent
Type Designator: TPN1R603PL
Marking Code: 1R603PL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 188 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 850 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TSON8
TPN1R603PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPN1R603PL Datasheet (PDF)
tpn1r603pl.pdf
TPN1R603PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN1R603PLTPN1R603PLTPN1R603PLTPN1R603PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 11 nC (typ.)(3) Small out
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