TPN1R603PL Specs and Replacement
Type Designator: TPN1R603PL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 188 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TSON8
TPN1R603PL substitution
- MOSFET ⓘ Cross-Reference Search
TPN1R603PL datasheet
tpn1r603pl.pdf
TPN1R603PL MOSFETs Silicon N-channel MOS (U-MOS -H) TPN1R603PL TPN1R603PL TPN1R603PL TPN1R603PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 11 nC (typ.) (3) Small out... See More ⇒
Detailed specifications: TPH3R70APL, TPH4R008NH, TPH4R10ANL, TPH8R008NH, TPHR6503PL, TPHR9003NL, TPN11003NL, TPN11006NL, 4435, TPN2R203NC, TPN3R704PL, TPN6R303NC, TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A
Keywords - TPN1R603PL MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: APM9430
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