All MOSFET. TPN1R603PL Datasheet

 

TPN1R603PL Datasheet and Replacement


   Type Designator: TPN1R603PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 188 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TSON8
 

 TPN1R603PL substitution

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TPN1R603PL Datasheet (PDF)

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TPN1R603PL

TPN1R603PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN1R603PLTPN1R603PLTPN1R603PLTPN1R603PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 11 nC (typ.)(3) Small out

Datasheet: TPH3R70APL , TPH4R008NH , TPH4R10ANL , TPH8R008NH , TPHR6503PL , TPHR9003NL , TPN11003NL , TPN11006NL , 2SK3568 , TPN2R203NC , TPN3R704PL , TPN6R303NC , TPW4R50ANH , TPWR8503NL , WSC15N10 , WSC40N06 , WSC5N20A .

History: WML11N70SR | ST12N10D | KNF4540A | STP85N3LH5 | IRHY57Z30CM | SSQ6N60 | WMB014N06HG4

Keywords - TPN1R603PL MOSFET datasheet

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