All MOSFET. TPN6R303NC Datasheet

 

TPN6R303NC MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPN6R303NC
   Marking Code: 6R303NC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TSON8

 TPN6R303NC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPN6R303NC Datasheet (PDF)

 ..1. Size:233K  toshiba
 tpn6r303nc.pdf

TPN6R303NC TPN6R303NC

TPN6R303NCMOSFETs Silicon N-channel MOS (U-MOS)TPN6R303NCTPN6R303NCTPN6R303NCTPN6R303NC1. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 5.2 m (typ.) (VGS = 10 V)(3) Lo

 9.1. Size:233K  toshiba
 tpn6r003nl.pdf

TPN6R303NC TPN6R303NC

TPN6R003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN6R003NLTPN6R003NLTPN6R003NLTPN6R003NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 4.3 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP3R303GMT | NP80N055MLE

 

 
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