TPN6R303NC PDF and Equivalents Search

 

TPN6R303NC Specs and Replacement

Type Designator: TPN6R303NC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TSON8

TPN6R303NC substitution

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TPN6R303NC datasheet

 ..1. Size:233K  toshiba
tpn6r303nc.pdf pdf_icon

TPN6R303NC

TPN6R303NC MOSFETs Silicon N-channel MOS (U-MOS ) TPN6R303NC TPN6R303NC TPN6R303NC TPN6R303NC 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 5.2 m (typ.) (VGS = 10 V) (3) Lo... See More ⇒

 9.1. Size:233K  toshiba
tpn6r003nl.pdf pdf_icon

TPN6R303NC

TPN6R003NL MOSFETs Silicon N-channel MOS (U-MOS -H) TPN6R003NL TPN6R003NL TPN6R003NL TPN6R003NL 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 6... See More ⇒

Detailed specifications: TPH8R008NH, TPHR6503PL, TPHR9003NL, TPN11003NL, TPN11006NL, TPN1R603PL, TPN2R203NC, TPN3R704PL, K4145, TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, WSC60N03, WSD100N06GDN56, WSD1216DN22

Keywords - TPN6R303NC MOSFET specs

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