TPN6R303NC MOSFET. Datasheet pdf. Equivalent
Type Designator: TPN6R303NC
Marking Code: 6R303NC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TSON8
TPN6R303NC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPN6R303NC Datasheet (PDF)
tpn6r303nc.pdf
TPN6R303NCMOSFETs Silicon N-channel MOS (U-MOS)TPN6R303NCTPN6R303NCTPN6R303NCTPN6R303NC1. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 5.2 m (typ.) (VGS = 10 V)(3) Lo
tpn6r003nl.pdf
TPN6R003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN6R003NLTPN6R003NLTPN6R003NLTPN6R003NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 4.3 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
