All MOSFET. WSC15N10 Datasheet

 

WSC15N10 Datasheet and Replacement


   Type Designator: WSC15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 170 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO251
 

 WSC15N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WSC15N10 Datasheet (PDF)

 ..1. Size:953K  winsok
 wsc15n10.pdf pdf_icon

WSC15N10

WSC15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSC15N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 80m 15Agate charge for most of the synchronous buck converter applications . Applications The WSC15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

Datasheet: TPN11003NL , TPN11006NL , TPN1R603PL , TPN2R203NC , TPN3R704PL , TPN6R303NC , TPW4R50ANH , TPWR8503NL , IRF1010E , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , WSD14N10DNG , WSD1614DN , WSD2012DN25 .

History: WPMD2010 | SM1F14NSKP

Keywords - WSC15N10 MOSFET datasheet

 WSC15N10 cross reference
 WSC15N10 equivalent finder
 WSC15N10 lookup
 WSC15N10 substitution
 WSC15N10 replacement

 

 
Back to Top

 


 
.