WSC15N10 Datasheet and Replacement
Type Designator: WSC15N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 170 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO251
WSC15N10 substitution
WSC15N10 Datasheet (PDF)
wsc15n10.pdf

WSC15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSC15N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 80m 15Agate charge for most of the synchronous buck converter applications . Applications The WSC15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous
Datasheet: TPN11003NL , TPN11006NL , TPN1R603PL , TPN2R203NC , TPN3R704PL , TPN6R303NC , TPW4R50ANH , TPWR8503NL , 4N60 , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , WSD14N10DNG , WSD1614DN , WSD2012DN25 .
History: H5N2509P
Keywords - WSC15N10 MOSFET datasheet
WSC15N10 cross reference
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WSC15N10 lookup
WSC15N10 substitution
WSC15N10 replacement
History: H5N2509P



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