All MOSFET. WSC15N10 Datasheet

 

WSC15N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSC15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 170 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO251

 WSC15N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSC15N10 Datasheet (PDF)

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 wsc15n10.pdf

WSC15N10 WSC15N10

WSC15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSC15N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 80m 15Agate charge for most of the synchronous buck converter applications . Applications The WSC15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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