All MOSFET. WSD1216DN22 Datasheet

 

WSD1216DN22 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD1216DN22
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 9.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN2X2-6L

 WSD1216DN22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD1216DN22 Datasheet (PDF)

 ..1. Size:905K  winsok
 wsd1216dn22.pdf

WSD1216DN22 WSD1216DN22

WSD1216DN22P-Ch MOSFETGeneral Description Product SummeryThe WSD1216DN22 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -12V 15m -9.4Agate charge for most of the small power switching and load switch applications. Applications The WSD1216DN22 meet the RoHS and Green Product requirement w

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NTP5411NG

 

 
Back to Top