WSD1216DN22 PDF and Equivalents Search

 

WSD1216DN22 Specs and Replacement

Type Designator: WSD1216DN22

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 297 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN2X2-6L

WSD1216DN22 substitution

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WSD1216DN22 datasheet

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WSD1216DN22

WSD1216DN22 P-Ch MOSFET General Description Product Summery The WSD1216DN22 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -12V 15m -9.4A gate charge for most of the small power switching and load switch applications. Applications The WSD1216DN22 meet the RoHS and Green Product requirement w... See More ⇒

Detailed specifications: TPN6R303NC, TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, WSC60N03, WSD100N06GDN56, IRF530, WSD14N10DNG, WSD1614DN, WSD2012DN25, WSD2018ADN22, WSD2018BDN22, WSD2018DN22, WSD2050DN, WSD2054DN22

Keywords - WSD1216DN22 MOSFET specs

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