WSD1216DN22 Datasheet and Replacement
Type Designator: WSD1216DN22
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 297 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN2X2-6L
WSD1216DN22 substitution
WSD1216DN22 Datasheet (PDF)
wsd1216dn22.pdf

WSD1216DN22P-Ch MOSFETGeneral Description Product SummeryThe WSD1216DN22 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -12V 15m -9.4Agate charge for most of the small power switching and load switch applications. Applications The WSD1216DN22 meet the RoHS and Green Product requirement w
Datasheet: TPN6R303NC , TPW4R50ANH , TPWR8503NL , WSC15N10 , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , AO4407 , WSD14N10DNG , WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 , WSD2050DN , WSD2054DN22 .
History: FQU5N60C | SI4850EY | STP23NM60N | SRT045N060H | IRHLNA797064 | IRF7322D1PBF | FHP8N60C
Keywords - WSD1216DN22 MOSFET datasheet
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History: FQU5N60C | SI4850EY | STP23NM60N | SRT045N060H | IRHLNA797064 | IRF7322D1PBF | FHP8N60C



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