All MOSFET. WSD1216DN22 Datasheet

 

WSD1216DN22 Datasheet and Replacement


   Type Designator: WSD1216DN22
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN2X2-6L
 
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WSD1216DN22 Datasheet (PDF)

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WSD1216DN22

WSD1216DN22P-Ch MOSFETGeneral Description Product SummeryThe WSD1216DN22 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -12V 15m -9.4Agate charge for most of the small power switching and load switch applications. Applications The WSD1216DN22 meet the RoHS and Green Product requirement w

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