WSD1216DN22 Datasheet and Replacement

   Type Designator: WSD1216DN22
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.5 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN2X2-6L
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