ZVP3310A
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVP3310A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 0.14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 20
Ohm
Package:
ELINE
ZVP3310A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVP3310A
Datasheet (PDF)
..1. Size:88K diodes
zvp3310a.pdf
P-CHANNEL ENHANCEMENT0A ZVP3310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V
0.1. Size:65K diodes
zvp3310astoa zvp3310astob zvp3310astz.pdf
P-CHANNEL ENHANCEMENT0A ZVP3310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V
7.1. Size:91K diodes
zvp3310fta zvp3310ftc.pdf
SOT23 P-CHANNEL ENHANCEMENT0F ZVP3310FMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 T V I VD S D D T T V G T I D T I I ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V Vs Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V I
7.2. Size:118K diodes
zvp3310f.pdf
SOT23 P-CHANNEL ENHANCEMENT0F ZVP3310FMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 T V I VD S D D T T V G T I D T I I ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V Vs Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V I
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