WSD3028DN PDF and Equivalents Search

 

WSD3028DN Specs and Replacement

Type Designator: WSD3028DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN3.3X3.3-8L

WSD3028DN substitution

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WSD3028DN datasheet

 ..1. Size:870K  winsok
wsd3028dn.pdf pdf_icon

WSD3028DN

WSD3028DN N-Ch MOSFET General Description Product Summery The WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19A gate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree... See More ⇒

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wsd3023dn56.pdf pdf_icon

WSD3028DN

WSD3023DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14A RDSON and gate charge for most of the -12A -30V 23m synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio... See More ⇒

 8.2. Size:1066K  winsok
wsd3020dn.pdf pdf_icon

WSD3028DN

WSD3020DN Dual N-Ch MOSFET General Description Product Summery The WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21A and gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron... See More ⇒

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3028DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast ... See More ⇒

Detailed specifications: WSD20L70DN, WSD20L75DN, WSD30100DN56, WSD30140DN56, WSD30150DN56, WSD30160DN56, WSD3020DN, WSD3023DN56, IRFZ24N, WSD3030DN, WSD3042DN56, WSD3045DN, WSD3050DN, WSD3056DN, WSD3066DN, WSD3067DN56, WSD3069DN56

Keywords - WSD3028DN MOSFET specs

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