Справочник MOSFET. WSD3028DN

 

WSD3028DN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WSD3028DN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: DFN3.3X3.3-8L
     - подбор MOSFET транзистора по параметрам

 

WSD3028DN Datasheet (PDF)

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WSD3028DN

WSD3028DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19Agate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree

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wsd3023dn56.pdfpdf_icon

WSD3028DN

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

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WSD3028DN

WSD3020DNDual N-Ch MOSFETGeneral Description Product SummeryThe WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21Aand gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron

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wsd30l20dn.pdfpdf_icon

WSD3028DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

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History: IXFN32N80P | SIA483DJ | IXTH13N80 | FM600TU-3A | MMN600DB015B | IPN50R650CE | FCA47N60F

 

 
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