WSD3056DN PDF and Equivalents Search

 

WSD3056DN Specs and Replacement

Type Designator: WSD3056DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: DFN3X3

WSD3056DN substitution

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WSD3056DN datasheet

 ..1. Size:1390K  winsok
wsd3056dn.pdf pdf_icon

WSD3056DN

WSD3056DN Dual N-Ch MOSFET Product Summery General Description BVDSS RDSON ID 30V 13m 35A The WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications POL Applications MB / VGA / Vcore The WSD3056DN meet the RoHS and Gre... See More ⇒

 8.1. Size:788K  winsok
wsd3050dn.pdf pdf_icon

WSD3056DN

WSD3050DN N-Ch MOSFET General Description Product Summery The WSD3050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 7m 30V 50A gate charge for most of the synchronous buck converter applications . Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guarante... See More ⇒

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3056DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast ... See More ⇒

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3056DN

WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application... See More ⇒

Detailed specifications: WSD30160DN56, WSD3020DN, WSD3023DN56, WSD3028DN, WSD3030DN, WSD3042DN56, WSD3045DN, WSD3050DN, AO3400A, WSD3066DN, WSD3067DN56, WSD3069DN56, WSD3070DN, WSD3075DN56, WSD3095DN56, WSD30L120DN56, WSD30L20DN

Keywords - WSD3056DN MOSFET specs

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