Справочник MOSFET. WSD3056DN

 

WSD3056DN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WSD3056DN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: DFN3X3
     - подбор MOSFET транзистора по параметрам

 

WSD3056DN Datasheet (PDF)

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WSD3056DN

WSD3056DNDual N-Ch MOSFETProduct SummeryGeneral Description BVDSS RDSON ID30V 13m 35AThe WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .Applications POL Applications MB / VGA / VcoreThe WSD3056DN meet the RoHS and Gre

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wsd3050dn.pdfpdf_icon

WSD3056DN

WSD3050DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 7m 30V 50A gate charge for most of the synchronous buck converter applications . Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guarante

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wsd30l20dn.pdfpdf_icon

WSD3056DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

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WSD3056DN

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

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