All MOSFET. ZVP4105A Datasheet

 

ZVP4105A Datasheet and Replacement


   Type Designator: ZVP4105A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.175 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: ELINE
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ZVP4105A Datasheet (PDF)

 ..1. Size:55K  diodes
 zvp4105a.pdf pdf_icon

ZVP4105A

P-CHANNEL ENHANCEMENTZVP4105AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D I DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V 8 V ID VD V V I I

 0.1. Size:40K  diodes
 zvp4105astoa zvp4105astob zvp4105astz.pdf pdf_icon

ZVP4105A

P-CHANNEL ENHANCEMENTZVP4105AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D I DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V 8 V ID VD V V I I

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History: FQU2N50B

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