All MOSFET. WSD3095DN56 Datasheet

 

WSD3095DN56 Datasheet and Replacement


   Type Designator: WSD3095DN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 267 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFN5X6-8
      - MOSFET Cross-Reference Search

 

WSD3095DN56 Datasheet (PDF)

 ..1. Size:2165K  winsok
wsd3095dn56.pdf pdf_icon

WSD3095DN56

WSD3095DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD3095DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 95A30V 3.5mcharge for most of the synchronous buck converter applications . The WSD3095DN56 meet the RoHS and Green Applications Product requirement 100% E

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3095DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3095DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

 9.3. Size:2847K  winsok
wsd3023dn56.pdf pdf_icon

WSD3095DN56

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPI120N04S4-02 | IRF441 | AP9926GEO | RW1C020UN | STD4N62K3 | 2SK2760-01 | GSM3050S

Keywords - WSD3095DN56 MOSFET datasheet

 WSD3095DN56 cross reference
 WSD3095DN56 equivalent finder
 WSD3095DN56 lookup
 WSD3095DN56 substitution
 WSD3095DN56 replacement

 

 
Back to Top

 


 
.