Справочник MOSFET. WSD3095DN56

 

WSD3095DN56 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WSD3095DN56
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 59 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 267 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: DFN5X6-8
     - подбор MOSFET транзистора по параметрам

 

WSD3095DN56 Datasheet (PDF)

 ..1. Size:2165K  winsok
wsd3095dn56.pdfpdf_icon

WSD3095DN56

WSD3095DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD3095DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 95A30V 3.5mcharge for most of the synchronous buck converter applications . The WSD3095DN56 meet the RoHS and Green Applications Product requirement 100% E

 9.1. Size:1410K  winsok
wsd30l20dn.pdfpdf_icon

WSD3095DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdfpdf_icon

WSD3095DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

 9.3. Size:2847K  winsok
wsd3023dn56.pdfpdf_icon

WSD3095DN56

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTQ130N15T | PJE8405 | 2SK3572-Z | IXFX24N100Q3 | MTM40N20 | IRHLUC770Z4 | OSG65R380FEF-NB

 

 
Back to Top

 


 
.