All MOSFET. WSD3810DN Datasheet

 

WSD3810DN Datasheet and Replacement


   Type Designator: WSD3810DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: DFN3X3
 

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WSD3810DN Datasheet (PDF)

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WSD3810DN

WSD3810DNDual N-Ch MOSFETProduct SummeryGeneral Description BVDSS RDSON ID ITEM30V 18A10.8m Q1The WSD3810DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell 30V 18A10.5m Q2density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .Applications High Frequency Point-of-Load Synchronous

Datasheet: WSD3075DN56 , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN , WSD30L40DN , WSD30L60DN56 , WSD30L90DN56 , 2SK3918 , WSD40120DN56 , WSD40120DN56G , WSD4023DN56 , WSD4038DN , WSD4050DN , WSD4062DN56 , WSD4066DN , WSD4070DN .

History: PSMN005-55P | MTN2572FP | IRF7477 | AM1440N | 2SK928 | APT9M100B | STFI8N80K5

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