WSD3810DN Specs and Replacement
Type Designator: WSD3810DN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 318 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
Package: DFN3X3
WSD3810DN substitution
- MOSFET ⓘ Cross-Reference Search
WSD3810DN datasheet
wsd3810dn.pdf
WSD3810DN Dual N-Ch MOSFET Product Summery General Description BVDSS RDSON ID ITEM 30V 18A 10.8m Q1 The WSD3810DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell 30V 18A 10.5m Q2 density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications High Frequency Point-of-Load Synchronous ... See More ⇒
Detailed specifications: WSD3075DN56, WSD3095DN56, WSD30L120DN56, WSD30L20DN, WSD30L30DN, WSD30L40DN, WSD30L60DN56, WSD30L90DN56, EMB04N03H, WSD40120DN56, WSD40120DN56G, WSD4023DN56, WSD4038DN, WSD4050DN, WSD4062DN56, WSD4066DN, WSD4070DN
Keywords - WSD3810DN MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK2549 | FDB3632 | WML15N65F2 | FDD6644
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