WSD75100DN56 Datasheet and Replacement
Type Designator: WSD75100DN56
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 395 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: DFN5X6-8
WSD75100DN56 substitution
WSD75100DN56 Datasheet (PDF)
wsd75100dn56.pdf

WSD75100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD75100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 75V 100A5.3mcharge for most of the synchronous buck converter Applications applications . The WSD75100DN56 meet the RoHS and Green DC-DC converter switching fo
Datasheet: WSD40N10GDN56 , WSD40P10DN56 , WSD45P10DN56 , WSD50P10ADN56 , WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , IRFZ44 , WSD80100DN56 , WSD80120DN56 , WSD90P06DN56 , WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 .
History: WPMD2010 | SM1F14NSKP
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History: WPMD2010 | SM1F14NSKP



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