WSD75100DN56 Specs and Replacement
Type Designator: WSD75100DN56
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 395 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: DFN5X6-8
WSD75100DN56 substitution
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WSD75100DN56 datasheet
wsd75100dn56.pdf
WSD75100DN56 N-Ch MOSFET General Description Product Summery The WSD75100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 75V 100A 5.3m charge for most of the synchronous buck converter Applications applications . The WSD75100DN56 meet the RoHS and Green DC-DC converter switching fo... See More ⇒
Detailed specifications: WSD40N10GDN56, WSD40P10DN56, WSD45P10DN56, WSD50P10ADN56, WSD50P10DN56, WSD6040DN56, WSD6056DN56, WSD60N10GDN56, IRF640, WSD80100DN56, WSD80120DN56, WSD90P06DN56, WSE3088, WSE3099, WSE9968, WSE9968A, WSF07N10
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